Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 44, Issue 10, Pages 7340-7344Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.7340
Keywords
Ge2Sb2Te5; phase change; optical band-gap; electrical conductivity; thermopower; DVD
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Optical and electrical properties of sputtered Ge2Sb2Te5 films in amorphous and crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl-type), and hexagonal Ge2Sb2Te5 are 0.74, 0.5, and 0.5 eV, respectively. Electrically, the amorphous and cubic states behave as semiconductors with activation energies of 0.45 and 0.14 eV, while the hexagonal state is metallic. The resistivity decreases slightly at the melting point of similar to 600 degrees C. All the states show p-type thermoelectric power, in which the amorphous and the cubic state have the activation energies of 0.3 and 0.14 eV. Carrier parameters and electronic densities-of-states are estimated and considered.
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