Journal
MICROSCOPY AND MICROANALYSIS
Volume 11, Issue 5, Pages 378-400Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927605050361
Keywords
3D imaging; electron tomography; transmission electron microscopy (TEM); high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM); semiconductor devices; catalyst
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Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (313) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.
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