Journal
SOLID STATE COMMUNICATIONS
Volume 136, Issue 5, Pages 257-261Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.08.011
Keywords
semiconductors; impurities in semiconductors
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Si1-xMnx diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si1-xMnx crystalline bulks. Hall effect measurements showed that annealed Si1-xMnx bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si1-xMnx bulks originated from the interaction between interstitial and substitutional Mn+ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si1-xMnx DMS bulks. (C) 2005 Elsevier Ltd. All rights reserved.
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