Journal
MICROELECTRONIC ENGINEERING
Volume 82, Issue 2, Pages 168-174Publisher
ELSEVIER
DOI: 10.1016/j.mee.2005.07.007
Keywords
Sb2Te3; nano-cell-element; current voltage characteristics; chalcogenide random access memory
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Phase-change nonvolatile memory cell elements composed of Sb2Te3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb2Te3 phase change film and electrode film in the cell element is 2826 nm(2) (diameter: 60 nm). The thickness of the Sb2Te3 chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb2Te3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio > 30 times is achieved for Sb2Te3 chalcogenide GRAM cell element. (c) 2005 Elsevier B.V. All rights reserved.
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