Journal
IEEE ELECTRON DEVICE LETTERS
Volume 26, Issue 10, Pages 716-718Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.854394
Keywords
capacitance; capacitance-voltage (C-V); characterization; mobility; organic field-effect transistors (OFETs); organic transistor; pentacene
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Mobility was extracted from top-contact pentacene organic field effect transistors with minimal assumptions. Low-frequency capacitance-voltage (C-V) measurements were used to calculate the sheet charge density of the channel, and current-voltage measurements with low drain-to-source voltage were used to extract mobility. The separation of charge and mobility with the use of C-V measurements illustrates that the mobility increases with gate voltage, differing significantly from mobility dependence on gate voltage in crystal silicon MOSFETs. The physical meaning of this mobility and the possible mechanism for the increase in mobility as a function of gate bias are discussed.
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