Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 240, Issue 1-2, Pages 386-390Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2005.06.135
Keywords
IBA; RBS; electroless; semiconductors; CdTe; SIMNRA
Ask authors/readers for more resources
Ion beam analysis was performed on CdTe(II-VI) semiconductor materials in order to characterize metal contacts, namely Pt, deposited by electroless process. It is essential to perform such a material which can provide high detection quality that needs good deposited metal contact as thick as possible. Rutherford Backscattering Spectrometry was used to determine the thickness and the stoichiometry of the layers formed at the surface. The depth profiles of Pt, Cd, Te and O were determined as a function of the dilution solution and the pH parameters which seemed to be determinant factors in the Pt layer deposition process. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, which can greatly influence the electrical quality of detectors. (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available