Journal
MICROELECTRONIC ENGINEERING
Volume 82, Issue 2, Pages 113-118Publisher
ELSEVIER
DOI: 10.1016/j.mee.2005.06.007
Keywords
low-kappa; dielectric material; diffusion; porosity; interconnectivity; porous material; diffusivity
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The presence of open porosity in a porous interlayer dielectric (ILD) can seriously degrade the ultimate performance and reliability of a device. A simple method for detecting the open porosity in ILDs would facilitate the design of materials with pore morphologies compatible with the required specifications of a particular device. The measurement of effective diffusion coefficients in a low-k ILD over a range of porosities is shown to permit the detection of open porosity. An example illustrating the simplicity of this method is presented using toluene solvent in a well-characterized porous organosilicate material. The result using this method is consistent with available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.
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