Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2077833
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We examine nonrecombination active minority-carrier trapping centers in crystalline silicon using a lock-in infrared camera technique. Application of a simple trapping model to the injection-dependent lifetime data obtained from the infrared emission signal results in high-resolution mappings (spatial resolution=170 mu m) of the trap density and the energy level. Measurements on Czochralski-grown silicon wafers show striation-related inhomogeneities of the trap density and a very homogeneous distribution of energy levels. (C) 2005 American Institute of Physics.
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