Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2089176
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The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field-effect transistor (FET) devices that contain films of p-type ZnO with arsenic as the p-type dopant. These p-type films have high crystalline quality and show long-term stability. The ZnO UV photodetectors are based on p-n junctions. The FETs are made with metal-semiconductor Schottky contacts on p-type ZnO and are normally off (enhancement) devices. The spectral and electrical characteristics of these devices are presented and explained. (C) 2005 American Institute of Physics.
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