Journal
JOURNAL OF APPLIED PHYSICS
Volume 98, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2102071
Keywords
-
Categories
Ask authors/readers for more resources
The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available