Lateral electron transport in Cu(In,Ga)Se2 investigated by electro-assisted scanning tunneling microscopy -: art. no. 172106

We investigate the lateral electron transport across grain boundaries in Cu(In,Ga)Se-2 (CIGS) by a combination of scanning tunneling microscopy (STM) with the excitation provided by the electron beam in electron microscopy-or electro-assisted STM. Using this method, we report evidence for a significant barrier for electron diffusion across grain boundaries in CuGaSe2 (CGS), which is not present in CuInSe2 (CIS). Finally, we discuss the effects of gallium addition. (C) 2005 American Institute of Physics.