Well-aligned Mn-doped ZnO nanowires synthesized by a chemical vapor deposition method

Well-aligned diluted magnetic semiconductor Zn1-xMnxO nanowires have been fabricated at 850 degrees C from a self-formed ZnO substrate using a chemical vapor deposition method. The as-synthesized Mn-doped ZnO nanowires were characterized by field emission scanning electron microscopy and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline and are perpendicularly grown along the c axis. Electron energy x-ray dispersive analysis, x-ray diffraction spectrometry, and TEM analysis clearly showed that Mn was doped both in the ZnO nanowires and substrate. Ferromagnetic ordering of the as-synthesized Zn1-xMnxO nanowire arrays was observed at 5 K with Curie temperature of 44 K by superconducting quantum interference device measurement. (C) 2005 American Institute of Physics.