GaN nanowire lasers with low lasing thresholds

We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar < 11-20 > direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry-Perot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22 kW/cm(2) that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed. (C) 2005 American Institute of Physics.