Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy

AlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A(1), with activation energy of 1.0 eV and apparent capture cross section of 2x10(-12) cm(2), has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A(1), which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect. (C) 2005 American Institute of Physics.