Field-effect transistors with layer-by-layer self-assembled nanoparticle thin films as channel and gate dielectric

This letter reports the fabrication of inorganic field-effect transistors (FET) combing bottom-up layer-by-layer (LbL) nanoself-assembly and top-down micromanufacturing techniques. The self-assembled multilayer of In2O3 and SiO2 nanoparticles, patterned by photolithography and lift-off methods, serve as channels and insulating layers, respectively. This FET works at an accumulation mode, with a threshold voltage of -1.25 V, a carrier mobility of 4.24x10(-3) cm(2)/V s, and an on/off current ratio of 10(2). Due to the simple, low-cost, and low-temperature features of the LbL nanoself-assembly technique that greatly eliminates expensive and complex facilities, this approach is particularly suitable for the very inexpensive FET fabrication. (C) 2005 American Institute of Physics.