Journal
IEEE ELECTRON DEVICE LETTERS
Volume 26, Issue 11, Pages 799-801Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.857719
Keywords
phase change memories (PCMs); nonvolatile memories; threshold switching; chalcogenide materials
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We studied the programming dynamics in phase change memory cells. It is shown that programming in stand-alone cells is strongly affected by the parasitic capacitance in the measurement setup, leading to a current overshoot after threshold switching of the amorphous chalcogenide. This results in a parasitic melting and quenching of the active material, affecting the current distribution during program and the final phase distribution in the active material. The relevance of this artefact for real-device operation is discussed with reference to the value of the parasitic capacitance.
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