Epitaxial growth of anthracene single crystals on graphite (0001) substrate with physical vapor growth technique

The epitaxial growth of an anthracene/graphite (0001) system was performed using the physical vapor growth technique. Most anthracene single crystals had the clear tendency to form the epitaxial orientation relationships [0 1 0](anthracene)//[2 (1) over bar (1) over bar 0], [(1) over bar 1 (1) over bar 0], or [1 1 (2) over bar 0](graphite), (1 0 0)(anthracene)//(0 0 0 1)(graphite), and a few, (0 0 1)(anthracene)//( 0 0 0 1)(graphite). The layer structure of each. (0 0 1) plane of an anthracene single crystal appeared on lateral planes with a high periodicity, which caused epitaxy with the highly periodic atomic arrangement of a graphite (0 0 0 1) substrate. (c) 2005 Elsevier B.V. All rights reserved.