Numerical simulation of electrical model for organic light-emitting devices with fluorescent dopant in the emitting layer

We present a numerical model for the quantitative simulation of electrical characteristics for organic light-emitting devices (OLEDs) with fluorescent dopants in the host. We use drift-diffusion equations in terms of the electron and hole current densities coupled with the Poisson's equation. Compared with other models proposed in previous literature, we include charge carrier trapping and direct carrier recombination phenomena on the fluorescent dopants in the simulation. Furthermore, current density, charge distribution, and recombination data in the device are obtained from this numerical study. Results for several multilayer devices with different fluorescent dopant concentrations are presented in this article. 'On the basis of the experimental data of a typical doped device, we have found good agreement between the simulation results and the experimental results.