Journal
SOLID STATE COMMUNICATIONS
Volume 136, Issue 8, Pages 475-478Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.09.001
Keywords
semiconductors; point defects; diffusion in solids; surface conductivity
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The mechanism of formation of a thin highly conductive layer, which is known to be present on ZnO surface, has been proposed. This process has been assumed to consist in accumulation of mobile shallow donors at crystal surface due to their drift in band-bending electric field caused by adsorbed oxygen. Experimental results that confirm this mechanism have been obtained. (c) 2005 Elsevier Ltd. All rights reserved.
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