Magnetoresistive hybrid transistor in vertical architecture

We report the development of a hybrid semiconductor-metal-semiconductor permeable-base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p-type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9-dioctyl-2,7-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal.