Journal
COMPTES RENDUS PHYSIQUE
Volume 6, Issue 9, Pages 1013-1021Publisher
ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.crhy.2005.10.007
Keywords
MRAM; non-volatile; magnetic tunnel junction; memory
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Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges. Special emphasis is placed on bit write strategies and their respective scaling perspectives. To cite this article: R.C Sousa, LL. Prejbeanu, C R. Physique 6 (2005). (c) 2005 Academie des sciences. Published by Elsevier SAS. All rights reserved.
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