Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 20, Issue 11, Pages 1103-1110Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/20/11/001
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The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum-well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the Shubnikov-de Haas (SdH) oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields, the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin zeros and WAL measurements.
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