Journal
JOURNAL OF CRYSTAL GROWTH
Volume 284, Issue 3-4, Pages 459-463Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2005.06.058
Keywords
photoluminescence; in situ reflectance measurement; XRD; MOCVD; ZnO
Ask authors/readers for more resources
High-quality ZnO films were grown on Si(1 1 1) Substrate by MOCVD using a thin AIN buffer layer. A low-temperature ZnO buffer layer was further introduced to accommodate the lattice mismatch and thermal expansion coefficient mismatch between the ZnO epitaxial layer and the AIN buffer layer. in situ laser reflectance measurements show that two-dimensional growth has been obtained, and a smooth surface morphology is demonstrated by atomic force microscopy (AFM) measurements. X-ray diffraction (XRD) results show that the ZnO film is a single crystal. The FWHMs of (0 0 2) and (1 0 2) omega-scans for the 2.1 mu m thick layer are 410 and 1321 arcsec, respectively. Free excitonic emission can be observed at low temperature and becomes dominant in the photoluminescence spectra above 120 K. (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available