Journal
ELECTRONICS LETTERS
Volume 41, Issue 23, Pages 1275-1276Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20052840
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Direct integration of AlGaAs/GaAs HEMTs on AIN ceramic substrates has been demonstrated based on the fluidic self-assembly (FSA) technology. The FSA is a unique technology to arrange small device blocks (around a few tens of microns) onto the other substrates. With this technology the core part of the HEMT having no pad can be mounted on the ceramic substrate. The HEMT core can then be connected electrically with the circuit on a ceramic substrate using a planar wiring process. This eliminates large stray capacitance and inductance in the conventional technology. It has been demonstrated that the good FET characteristics are obtained even after FSA process.
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