Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2132062
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We demonstrate organic nonvolatile memories based on transistors, made from spin-coated polymers, that have programming voltages of 15 V and good data retention capabilities. The low-voltage programmable ferroelectric field-effect transistors were obtained by an optimized ferroelectric polymer deposition method using cyclohexanone as a solvent from which films can be obtained that are thin, smooth and defect free. The data retention characteristics were measured for 3 h under constant read conditions. Extrapolation predicts that the data retention capability exceeds 10 years. (C) 2005 American Institute of Physics.
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