Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2130530
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Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Q(f), within the a-SiCx(n):H film and the fundamental recombination of holes, S-p0. The main result is that surface recombination velocity decreases with film thickness up to 40 nm and then saturates. The evolution of the interface parameters indicates that Q(f) could be located in a layer less than 10 nm thick. In addition, S-p0 increases with thinner films probably due to different hydrogenation and saturation of interface dangling bonds during forming gas annealing. (C) 2005 American Institute of Physics.
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