Journal
APPLIED PHYSICS LETTERS
Volume 87, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2135382
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The room-temperature photoluminescence (PL) from silicon nanocrystals embedded in a SiO2 matrix fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and subsequent annealing in Ar and (Ar+5%H-2) was studied. In addition to strong increases of the integrated PL intensity (factors of similar to 4 to 10), the selective enhancement of contributions to the PL spectra at long wavelengths was observed for (Ar+5%H-2) annealings. The selective H passivation of Si dangling bonds in disordered Si nanoclusters where radiative recombination proceeds through disorder-induced shallow states is proposed as a possible explanation for the observed effects. (c) 2005 American Institute of Physics.
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