β-Ga2O3 nanowires:: Synthesis, characterization, and p-channel field-effect transistor -: art. no. 222102

Quasione-dimensional Ga2O3 nanowires are synthesized via catalytic chemical vapor deposition method. Their morphology and crystal structure are characterized by electron microscopy and x-ray diffraction techniques, and their optical property is studied by photoluminescence measurement. To develop their future application in nanoelectronic devices, the as-grown Ga2O3 nanowires are doped with zinc to increase its carrier concentration and subsequently fabricated into field-effect transistors. Electron transport measurements show that the doped nanowires exhibit p-type semiconducting behavior with a significant enhancement of conductivity. (c) 2005 American Institute of Physics.