Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states

The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (similar to 60 meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5 K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.