Reduction of capillary force for high-aspect ratio nanofabrication

The wet processing of SU8 resist was modified in order to achieve a high-aspect ratio patterning with feature size of 100 nm. A final rinse in water, which makes a large contact angle on the resist (less wetting) was added to the procedure. This allowed considerable reduction of the capillary force, which is responsible for pattern distortions in three-dimensional (3D) lithography. 3D recording of high-aspect ratio (f(ar)=18) structures by holographic exposure using femtosecond pulses in SU8 resist was achieved using this modified development procedure. The thickness of the free-standing planes was approximately 100 nm. High fidelity of this recording method was confirmed by a Moire pattern transfer into a developed SU8 pattern. In terms of focusing, the 100 nm feature size comprised 1/13-th of the diffraction limit. This modified development is applicable for wet processing when super-critical drying cannot be used.