Journal
JOURNAL OF CRYSTAL GROWTH
Volume 285, Issue 3, Pages 312-317Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.08.046
Keywords
x-ray diffraction; metalorganic chemical vapor deposition; nitrides; Si substrate; light-emitting diodes
Ask authors/readers for more resources
High-performance InGaN blue light-emitting diodes (LEDs) on Si(I 1 1) substrates were fabricated by metalorganic chemical vapor deposition. Crack-free films were obtained using Ga-rich GaN high-temperature buffer. The full-width at half-maximum (FWHM) of the (0 0 2) X-ray rocking curve and the (10 2) X-ray rocking curve were 343 and 520 arcsec, respectively, which indicate that the LED wafer on Si is of high crystalline quality. The operating voltage of 3.8 V, turn-on voltage about 2.5 V and series resistance of 47 Omega were obtained for the LED. The electroluminescence peaks at 460 nm with a FWHM about 28 nm at 20 mA current. In addition, the LED shows an EL intensity of 20 mcd at an injection current of 20 mA. These characteristics are comparable to those of LED on sapphire. (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available