Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 52, Issue 12, Pages 2727-2735Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2005.859593
Keywords
back-scattering; ballistic transport; Monte Carlo (MC) method; MOSFETs; semiconductor device modeling; silicon-on-insulator (SOI)
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In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
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