Growth and characterization of dual-beam pulsed-laser-deposited Zn1-xCoxO thin films -: art. no. 114909

Dual beam pulsed laser deposition was used to synthesize Zn1-xCoxO thin films with a large range of Co concentrations. In this paper, the influence of growth temperature on the crystal structures, magnetic properties, and semiconductor properties of these films was studied. It was found that the growth temperature has a significant effect on dopant concentration, as well as the structure and properties of the films. The optimum growth temperature is around 650 degrees C. The thin films were of single crystal especially at low Co concentrations. Epitaxial growth of the thin films was observed. No precipitates were observed at low Co concentrations. Magnetic hysteresis loops were observed at room temperature, indicating that magnetism can be realized with Co doped into ZnO. However, the improvement was limited. The Hall resistivity tended to increase, while carrier density tended to decrease with Co concentration until a certain Co concentration (10%) is achieved. When the growth temperature was greater than 650 degrees C, the Hall resistivity decreased, while carrier density increased. The Hall mobility increased with growth temperature. The possible reasons of the observed magnetism and semiconductor properties were also discussed.