Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 52, Issue 6, Pages 2455-2461Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2005.860742
Keywords
heavy ions; field programmable gate arrays; proton radiation effects
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This paper provides a methodology for estimating the proton and heavy ion static saturation cross-sections for multi-bit upsets (MBUs) in Xilinx field-programmable gate arrays and describes a methodology for determining MBUs' effects on triple-modular redundancy protected circuits. Experimental results are provided.
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