Journal
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume 124, Issue -, Pages 354-358Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2005.08.126
Keywords
carbon nanotube; PECVD; vertical growth; electron emission; lithography; MOSFET
Ask authors/readers for more resources
PECVD-grown carbon nanotubes on (100)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT's [Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hosseinzadegan, M.D. Robertson, C. Benet, EMRS Spring Meeting, Strasbourg, France, May 2005] the grown nanotubes are encapsulated by means of an insulating TiO2 layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist-coated substrates. Straight lines with widths between 50 and 200 nm have been successfully drawn. This technique has been applied on P-type (100)silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion Cox exceeding 0.7 mu F/cm(2), drive current equal to 3 10 mu A/mu m. (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available