Site specific Eu3+ stimulated emission in GaN host -: art. no. 011111

We report the observation of site-specific Eu3+ stimulated emission in GaN:Eu laser structures. Two main Eu sites have been identified from emission peaks associated with the D-5(0)->F-7(2) transition during above band gap optical pumping with a pulsed N-2 laser (337 nm): (a) Eu-x emitting at similar to 620 nm-present in short cavities (similar to 100 mu m), exhibiting stimulated (side) emission threshold and a fast decay time constant (30-35 mu s); (b) Eu-y emitting at similar to 621 nm-present in long cavities (similar to 7 mm) and in surface emission, exhibiting no stimulated emission threshold and a slow decay time constant (150-250 mu s). (c) 2006 American Institute of Physics.