Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2159577
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We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 Omega/cm and average transmittance above 88% in visible range were obtained even in IZO layers deposited by BCS at room temperature. The TOLED with the IZO top cathode layer shows electrical characteristics and lifetime comparable to a TOLED with only thermally evaporated Mg-Ag cathode. In particular, it is shown that the TOLED with the IZO top cathode film shows very low leakage current density of 1x10(-5) mA cm(2) at reverse bias of -6 V. This suggests that there is no plasma damage caused by the bombardment of energetic particles during IZO sputtering using the BCS system. (c) 2006 American Institute of Physics.
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