Journal
JOURNAL OF CRYSTAL GROWTH
Volume 286, Issue 2, Pages 259-278Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.09.050
Keywords
uniformity; metalorganic vapor phase epitaxy; gallium nitride
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In this paper, gallium nitride (GaN) growth chemistry is characterized by two competing reaction pathways. An overview of GaN gas-phase and surface-phase chemistry is used to generate a comprehensive model for epitaxial GaN growth from the commonly used precursors, trimethyl gallium ((CH3)(3)Ga) and ammonia (NH3). The role of reactor geometry in controlling the selectivity among the competing reaction pathways is explored in the context of a planetary radial-flow CVD system. Finally, application of a geometrically based uniformity criterion is presented for film uniformity optimization. (c) 2005 Elsevier B.V. All rights reserved.
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