Journal
THIN SOLID FILMS
Volume 495, Issue 1-2, Pages 82-85Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.08.225
Keywords
layered compounds; intercalation; luminescence; excitons
Ask authors/readers for more resources
The radiative recombination in the layered transition metal dichalcogenide compounds 2H-WS2: (Br-2, I-2), 2H-WSe2:I-2 and 2H-MoS2: Cl-2 has been investigated. It is shown that the strong photoluminescence (PL) of these indirect band gap semiconductors is caused by recombination of excitons bound to the neutral centres formed by halogen molecules intercalated in the well-defined sites of the van der Waals gap. These centres, located at energy ET P-z approximate to 0.1 eV below the conduction band, display similar properties as the isoelectronic traps in GaP, providing the efficient radiative recombination. The observed broad band IR emission is attributed to the deep centres, caused by the intrinsic defects of the host lattices. (c) 2005 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available