Journal
APPLIED PHYSICS LETTERS
Volume 88, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2168255
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We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5-70 K) and at low excitation intensities (0.5-10 W/cm(2)). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70 meV/decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.
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