Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry -: art. no. 042105

We determine the electron effective mass parameter m(*)=0.086 +/- 0.004 m(0) of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier concentration N=4.5x10(17) cm(-3) and optical mobility mu=300 +/- 20 cm(2)/(V s) using magneto-optic generalized ellipsometry in the terahertz and far-infrared spectral domain for wave numbers from omega=30-650 cm(-1). The room-temperature measurements were carried out with magnetic fields up to 3 T. We employ synchrotron and black-body radiation sources for the terahertz and far-infrared spectral regions, respectively. Comparison with previous experimental results from samples with considerably higher free electron density and theoretical calculations suggest that our value is sufficiently unaffected by band nonparabolicity and provides a good approximation of the Gamma-point conduction band mass in Zn0.87Mn0.13Se. We further provide optical phonon mode parameters and the high-frequency dielectric constant. (c) 2 006 American Institute of Physics.