Fe implanted ferromagnetic ZnO -: art. no. 052508

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4x10(16) cm(-2), very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron x-ray diffraction and Mossbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10(15) cm(-2) are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor. (c) 2006 American Institute of Physics.