Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume 19, Issue 1, Pages 50-56Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2005.863228
Keywords
capacitance measurement; charge-based capacitance measurement (CBCM); charge injection; interconnect capacitance
Ask authors/readers for more resources
In this work, we describe a novel operation of charge-injection-induced error-free charge-based capacitance measurement (CIEF CBCM) method. This method has the Simplest test structure among various CBCM methods by using only one N/PMOS pair. CIEF CBCM has the advantage of being free from charge-injection-induced errors and of efficient layout area usage. It is very suitable for industrial applications for large amounts of accurate capacitance characterizations with a limited layout area. Besides, CIEF CBCM is also implemented for investigating the impact of floating dummy metal fills on interconnect capacitance directly from silicon data.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available