A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling

A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads' parasitics; from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 run. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin,, (minimum noise figure), R, (noise resistance), Re(Y-sopt), and Im(Y-sopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attributed to the advancement of f(T) to 100-GHz level and the effectively reduced gate resistance by multifinger structure.