Journal
ELECTROCHEMISTRY COMMUNICATIONS
Volume 8, Issue 2, Pages 262-266Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2005.11.011
Keywords
diamond-like carbon films; electrochemical deposition; metal-doped DLC; copper; tribology
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Copper nanoparticles containing diamond-like carbon (Cu-DLC) films have been prepared on the Si substrate using electrochemical deposition method by choosing dimethylsulfoxide as carbon source and acetonitrile solution of [Cu(CH3CN)(4)]ClO4 as dopant at relatively low voltage (150 V). The composition, structure and morphology of the film have been investigated by X-ray photoelectron spectroscope (XPS), Fourier transform infrared (FTIR), Raman scattering spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. The results show that the copper element was embedded in the amorphous carbon film and the codeposition rate of carbon film and copper Cluster was relatively high. Furthermore, a ball-on-disc test was employed to obtain information about the frictional properties of the Cu-DLC films. The growth mechanisms of the Cu-DLC films were also discussed. (c) 2005 Elsevier B.V. All rights reserved.
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