Journal
COMPTES RENDUS CHIMIE
Volume 9, Issue 2, Pages 325-331Publisher
ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.crci.2005.03.029
Keywords
iron oxide; ceramic photoelectrode; interface; impedance; equivalent circuits
Categories
Ask authors/readers for more resources
The ceramic semiconductor photoelectrodes made of Fe1.99Sn0.01O3, Fe1.99Nb0.01O3, Fe1.8Nb0.2O3 and FeNbO4 are synthesized. The spectral and current-voltage characteristics of photoelectrodes are measured. The anodic photocurrent onset potential is determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode are calculated. The analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell with manufactured electrodes is carried out. On the basis of this analysis. equivalent circuits describing the structure of the double electrical layer on the semiconductor-electrolyte interface are proposed, their parameters are calculated. Main limiting steps of the electrode process are determined.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available