Journal
DIAMOND AND RELATED MATERIALS
Volume 15, Issue 2-3, Pages 292-295Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2005.08.007
Keywords
single crystal growth; plasma CVD; synthetic diamond; detectors
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The deposition conditions and the detection properties of a homoepitaxial diamond film, grown by microwave Chemical Vapor Deposition (CVD) on a HPHT single crystal substrate are reported. The charge collection spectrum, measured under irradiation with a triple Pu-239 (241)AM Cm-244 source emitting 5.16, 5.48 and 5.80 MeV alpha-particles respectively, shows three clearly resolved peaks with an energy resolution of about 1.1%. Both the charge collection efficiency and the energy resolution reach saturation values when the applied voltage exceeds 60 V, suggesting 100% collection efficiency. The detector was also tested with 14.8 and 14.1 MeV neutrons. The obtained collection spectra show a well separated C-12(n,alpha(0))Be-9 reaction peak with an energy spread of 0.5 MeV for 14.8 MeV neutrons and 0.3 MeV for 14.1 MeV neutrons, which are fully compatible with the energy spread of the incident neutrons. (c) 2005 Elsevier B.V. All rights reserved.
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