Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 82, Issue 2, Pages 281-285Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-005-3329-7
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Transparent conductive In2O3 films were deposited by reactive evaporation of In and analyzed in-situ with photoelectron spectroscopy. The interface formation of In2O3 with evaporated CdTe has been investigated using the same technique. A valence band offset Delta E-VB=2.1 +/- 0.1 eV is determined, resulting in a negligible conduction band offset. However, In2O3 will not provide an Ohmic contact to n-CdTe, due to the Fermi level position at the interface.
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