Controlled growth of silicon nanowires on silicon surfaces

This paper reports on silicon nanowire growth on oxidized silicon substrates using different approaches for gold catalyst deposition. The gold coated surfaces and the resulting nanowires were characterized using scanning electron microscopy. The gold catalysts were made up of gold nanoparticles (50 nm diameter), which were either dispersed or spotted at different concentrations using a robot, or were formed on a patterned Si/SiO2 substrate by metal evaporation (63 nm diameter). The subsequent silicon nanowire growth was accomplished by CVD decomposition of silane gas (SiH4) at high temperature (400-500 degrees C) in a vapor-liquid-solid (VLS) process. Under these conditions, a high density of silicon nanowires (SiNWs) was achieved on the oxidized silicon surfaces, but the distribution of the nanowires was found to be inhomogeneous in the case of the gold nanoparticles. Such result is attributed to the aggregation of the nanoparticles during the growth process. Alternatively, when gold nanodot catalysts were lithographically patterned on the surface, the nanowires were obtained in the patterned regions.