Journal
SOLID-STATE ELECTRONICS
Volume 50, Issue 2, Pages 287-290Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2005.12.017
Keywords
silicon-on-insulator technology; MOS devices; insulated gate FETs; radiation effects
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This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2). (c) 2006 Elsevier Ltd. All rights reserved.
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